Elucidating Piezoelectricity and Strain in Monolayer MoS2 at the Nanoscale Using Kelvin Probe Force Microscopy.

Strain engineering modifies the optical and electronic properties of atomically thin transition metal dichalcogenides. Highly inhomogeneous strain distributions in two-dimensional materials can be easily realized, enabling control of properties on the nanoscale; however, methods for probing strain on the nanoscale remain challenging. In this work, we characterize inhomogeneously strained monolayer MoS2 via Kelvin probe force microscopy and electrostatic gating, isolating the contributions of strain from other electrostatic effects and enabling the measurement of all components of the two-dimensional strain tensor on length scales less than 100 nm. The combination of these methods is used to calculate the spatial distribution of the electrostatic potential resulting from piezoelectricity, presenting a powerful way to characterize inhomogeneous strain and piezoelectricity that can be extended toward a variety of 2D materials.

Electrostatic moiré potential from twisted hexagonal boron nitride layers.

Moiré superlattices host a rich variety of correlated electronic phases. However, the moiré potential is fixed by interlayer coupling, and it is dependent on the nature of carriers and valleys. In contrast, it has been predicted that twisted hexagonal boron nitride (hBN) layers can impose a periodic electrostatic potential capable of engineering the properties of adjacent functional layers. Here, we show that this potential is described by a theory of electric polarization originating from the interfacial charge redistribution, validated by its dependence on supercell sizes and distance from the twisted interfaces. This enables controllability of the potential depth and profile by controlling the twist angles between the two interfaces. Employing this approach, we further demonstrate how the electrostatic potential from a twisted hBN substrate impedes exciton diffusion in semiconductor monolayers, suggesting opportunities for engineering the properties of adjacent functional layers using the surface potential of a twisted hBN substrate.

Electrically Activated UV-A Filters Based on Electrochromic MoO3-x.

Chromism-based optical filters is a niche field of research, due to there being only a handful of electrochromic materials. Typically, electrochromic transition metal oxides such as MoO3 and WO3 are utilized in applications such as smart windows and electrochromic devices (ECD). Herein, we report MoO3-x-based electrically activated ultraviolet (UV) filters. The MoO3-x grown on indium tin oxide (ITO) substrate is mechanically assembled onto an electrically activated proton exchange membrane. Reversible H+ injection/extraction in MoO3-x is employed to switch the optical transmittance, enabling an electrically activated optical filter. The devices exhibit broadband transmission modulation (325-800 nm), with a peak of ∼60% in the UV-A range (350-392 nm). Comparable switching times of 8 s and a coloration efficiency of up to 116 cm2 C-1 are achieved.